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16 December 2009
"Transmission Electron Microscopy of Semiconductor Hetero-Epitaxial Strained Films"
by
Xiaohua Wu
| Abstract: |
Semiconductor lattice-mismatched hetero-epitaxial strained films represent
an important class of thin films in the development of high-performance
electronic and opto-electronic devices. The growth of highly perfect,
planar, strained epitaxial films offers a number of interesting materials
processing challenges in semiconductor device fabrication.
Transmission electron microscopy (TEM) plays an important role in
characterizing the film morphology and defects, which helps to optimize
the growth methodology and elucidate the strain relaxation mechanisms.
In the first part of this talk, I will present some conventional and high
resolution TEM studies on the strain relaxation of the hetero-epitaxial
InGaAsP strained films on InP substrates (InGaAsN/InP). The second part
of my talk will focus on a relatively new TEM technique, annular dark
field scanning transmission electron microscopy (ADF-STEM). I will
introduce the technique and instrument, and present some recent studies
on the composition and strain contrast of GaNAs/GaAs, SiC/Si and SiGe/Si
systems in ADF-STEM images. |
| Where: |
Tailgators Sports and Entertainment
1642 Merivale Road, Ottawa, Ontario |
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When: |
Wednesday, December 16th, 2009
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Social Hour: |
6:30 pm |
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Dinner: |
7:00 pm |
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Technical Meeting: |
8:00 pm |
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Price: |
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Member: |
$22.00 |
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Non-Member: |
$26.00 |
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Student: |
$12.00 |
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Note: |
There is no charge for those who wish to
attend the technical presentation only. |
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